|For Experimental growth of quality epitaxial
layers III-V, II-VI compounds.
||Directly heated silicon carbide coated,
high purity graphite or PBN susceptor.
||Low mass thermocouple probe immersed into
||Broad temperature and pressure application.
||Highest quality materials utilized throughout.
The MOCVD-500-A is a low cost, versatile, high quality, metal-organic chemical vapor deposition system.
The system is designed to offer a lower cost alternative to MOCVD research. Uniform temperature regions up to 1050°C are controllable with pressures up to 700 Torr.
Standard features include:
|A resistance heated, low mass, zone furnace
for hot wall applications or a directly heated, high purity,
silicon carbide coated graphite or PBN susceptor suspended on
an inert cantilever for cold wall applications are available
||Accurate temperature measurements and
controls are accomplished with an immersed low mass thermocouple
well into the heart of the heat zone, resulting in fast responses
to temperature changes due to conduction losses of the laminar
||Precise reactor gas mixing and pressure
control is accomplished with the combination of upstream mass
flow meters and a downstream pump throttling valve, between the
CVD reactor and mechanical pump.
||All of the components and the materials
are selected and processed to assure an inert environment for
high quality processed films.
||Optional high purity passivated metal-organic
sources are offered in 200, 400, and 800 cc volumes. They can
be supplied with temperature controlled jackets to control the
vapor pressure of the emitting materials.
||The system can be easily retrofitted for
homogeneous or heterogeneous reactants. Upstream plasma enhancement
can be readily adapted to the standard system.
||The growth of stable, uniform films of
various materials can be accomplished with this system.
||Many experimental processes can be achieved
readily with minor adaptations to this system.
||Laminar flow patterns over various substrates
can be configured to accommodate susceptors in various positions.
||Quick access to the processed wafer is
accomplished with the release of two thumb screws at the downstream
port. A convenient handle extracts the susceptor assembly on
two linear ball bearing guides for rapid substrate removal and