Metal-Organic Compound Chemical Vapor Deposition

Tek-Vac Model MOCVD-500-A

For Experimental growth of quality epitaxial layers III-V, II-VI compounds.
Multi-Layer structures.
Directly heated silicon carbide coated, high purity graphite or PBN susceptor.
Low mass thermocouple probe immersed into susceptor.
Broad temperature and pressure application.
Highest quality materials utilized throughout.



The MOCVD-500-A is a low cost, versatile, high quality, metal-organic chemical vapor deposition system.

The system is designed to offer a lower cost alternative to MOCVD research. Uniform temperature regions up to 1050°C are controllable with pressures up to 700 Torr.

Standard features include:

A resistance heated, low mass, zone furnace for hot wall applications or a directly heated, high purity, silicon carbide coated graphite or PBN susceptor suspended on an inert cantilever for cold wall applications are available options.
Accurate temperature measurements and controls are accomplished with an immersed low mass thermocouple well into the heart of the heat zone, resulting in fast responses to temperature changes due to conduction losses of the laminar gas stream.
Precise reactor gas mixing and pressure control is accomplished with the combination of upstream mass flow meters and a downstream pump throttling valve, between the CVD reactor and mechanical pump.
All of the components and the materials are selected and processed to assure an inert environment for high quality processed films.
Optional high purity passivated metal-organic sources are offered in 200, 400, and 800 cc volumes. They can be supplied with temperature controlled jackets to control the vapor pressure of the emitting materials.
The system can be easily retrofitted for homogeneous or heterogeneous reactants. Upstream plasma enhancement can be readily adapted to the standard system.
The growth of stable, uniform films of various materials can be accomplished with this system.
Many experimental processes can be achieved readily with minor adaptations to this system.
Laminar flow patterns over various substrates can be configured to accommodate susceptors in various positions.
Quick access to the processed wafer is accomplished with the release of two thumb screws at the downstream port. A convenient handle extracts the susceptor assembly on two linear ball bearing guides for rapid substrate removal and replacement.